Substrate effects in wideband SiGe HBT mixer circuits

Author

Johansen, T.K. ; Krozer, V. ; Vidkjaer, J. ; Djurhuus, T.

Author_Institution

Dept. of Electromagn. Syst., Tech. Univ. Denmark, Lyngby, Denmark

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

469

Lastpage

472

Abstract

In this paper, the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations are also applied to predict short distance substrate coupling effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35 /spl mu/m, 60 GHz f/sub t/ SiGe HBT BiCMOS process.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; coupled circuits; electromagnetic coupling; equivalent circuits; heterojunction bipolar transistors; integrated circuit testing; millimetre wave mixers; semiconductor device models; semiconductor materials; substrates; 60 GHz; HBT BiCMOS process; SiGe; electromagnetic simulations; equivalent circuit models; onwafer test structures; short distance substrate coupling effects; substrate effects; substrate networks; wideband HBT mixer circuits; Circuit simulation; Circuit testing; Coupling circuits; Electromagnetic coupling; Electromagnetic modeling; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Silicon germanium; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637257