Low noise, low interference automated bias networks for low frequency noise characterization set-up´s

The present paper reports on the implementation of electromechanical bias networks to be employed in an automated experimental set-up for the low frequency noise characterization of bipolar transistors. The obtained bias networks allowed improving the automatization degree of the experimental set-up, reducing therefore the time and the efforts for the systematic characterization necessary for the identification of nonlinear low frequency noise models. The electromechanical bias networks were successfully applied to the systematic characterization at wafer level of microwave GaInP/GaAs heterojunction bipolar transistors.