Non-linear noise mechanisms in SiGe BiCMOS devices

In this paper, we have proposed some guidelines to achieve a low phase noise design using SiGe BiCMOS commercial technology. First, we observed that the excess noise is l/f type with an excess noise corner frequency in the 1 kHz range, close to the state-of-the-art. Secondly, the measurement correlation between the noise generators indicates that more than one 1/f noise source are present in these devices. We have implemented a low frequency noise model based on the intrinsic noise sources that resulted in good accuracy. Finally, the good LF noise capabilities have been confirmed by residual phase noise measurements at 10 GHz and phase noise at 4 GHz. We demonstrated that an appropriate intrinsic LF noise modelling gives quite a good phase noise prediction. This provides the opportunity of performing low phase noise design of RF and microwave oscillators.