DocumentCode
2025178
Title
A 4.8-6 GHz IEEE 802.11 a WLAN SiGe-bipolar power amplifier with on-chip output matching
Author
Bakalski, Winfried ; Vasylyev, Andriy ; Simbürger, Werner ; Kall, Marcus ; Schmid, Alfons ; Kitlinski, Krzysztof
Author_Institution
Infineon Technol. AG, Munich, Germany
fYear
2005
fDate
3-4 Oct. 2005
Firstpage
481
Lastpage
483
Abstract
A fully integrated 4.8-6 GHz wireless LAN SiGe-bipolar power amplifier chip requiring no external components was realized using the small die size of only 1/spl times/0.9 mm/sup 2/. At 1 V to 2.4 V, the maximum output power level is 19 dBm (22 % PAE) to 26.3 dBm (28.5% PAE) at 5.25 GHz with a maximum small signal gain of 33 dB. The maximum average output power for a maximum 3% error vector magnitude (EVM) is 16 dBm. The PA survives a VSWR of 50.
Keywords
Ge-Si alloys; MMIC power amplifiers; bipolar MMIC; semiconductor materials; wireless LAN; 1 to 2.4 V; 22 percent; 28.5 percent; 4.8 to 6 GHz; IEEE 802.11 a WLAN; SiGe; SiGe-bipolar power amplifier; error vector magnitude; on-chip output matching; wireless LAN; Circuit synthesis; Impedance matching; Integrated circuit technology; Network topology; Power amplifiers; Power generation; Production; Radiofrequency amplifiers; Silicon germanium; Wireless LAN;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location
Paris
Print_ISBN
88-902012-0-7
Type
conf
Filename
1637260
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