DocumentCode
2025250
Title
Buffer Coding for Asymmetric Multi-Level Memory
Author
Bohossian, V. ; Anxiao Jiang ; Bruck, J.
Author_Institution
Electr. Eng. Dept., California Inst. of Technol., Pasadena, CA
fYear
2007
fDate
24-29 June 2007
Firstpage
1186
Lastpage
1190
Abstract
Certain storage media such as flash memories use write-asymmetric, multi-level storage elements. In such media, data is stored in a multi-level memory cell the contents of which can only be increased, or reset. The reset operation is expensive and should be delayed as much as possible. Mathematically, we consider the problem of writing a binary sequence into write-asymmetric q-ary cells, while recording the last r bits written. We want to maximize t, the number of possible writes, before a reset is needed. We introduce the term buffer code, to describe the solution to this problem. A buffer code is a code that remembers the r most recent values of a variable. We present the construction of a single-cell (n=1) buffer code that can store a binary (I=2) variable with t=lfloorq/2r-1rfloor+r-2 and a universal upper bound to the number of rewrites that a single-cell buffer code can have: tleslfloorq-1/lr-1rfloormiddotr+lfloorlogl{[(q-1) mod (lr-1)]+1}rfloor. We also show a binary buffer code with arbitrary n, q, r, namely, the code uses n q-ary cells to remember the r most recent values of one binary variable. The code can rewrite the variable t=(q-1)(n-2r+1)+r-1 times, which is asymptotically optimal in q and n. We then extend the code construction for the case r=2, and obtain a code that can rewrite the variable t=(q-1)(n-2)+1 times. When q=2, the code is strictly optimal.
Keywords
binary sequences; buffer storage; encoding; asymmetric multilevel memory; binary buffer code; binary sequences; buffer coding; flash memories; multilevel storage elements; storage media; write-asymmetric q-ary cells; write-asymmetric storage elements; Binary sequences; Buffer storage; Computer science; Context modeling; Delay; Flash memory; Secondary generated hot electron injection; Tunneling; Upper bound; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Theory, 2007. ISIT 2007. IEEE International Symposium on
Conference_Location
Nice
Print_ISBN
978-1-4244-1397-3
Type
conf
DOI
10.1109/ISIT.2007.4557384
Filename
4557384
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