DocumentCode
2025406
Title
Stress-induced failure modes in high-tuning range RF MEMS varactors
Author
Chokshi, Trushal ; Peroulis, Dimitrios
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2005
fDate
3-4 Oct. 2005
Firstpage
517
Lastpage
520
Abstract
In this paper we focus on electromechanical modeling of high-tuning range MEMS varactors with a focus on failures caused by residual compressive stress. In particular, we quantitatively evaluate for the first time a high-tuning range parallel-plate MEMS varactor in the presence of residual compressive stress. A 3D model generated in ANSYS agrees very favorably with the measured data and explains non-ideal discontinuities in the varactor´s C-V curve. It is interesting to note that, although the failures considered in this paper are not encountered in RF MEMS switches, they become particularly important in analog MEMS varactors since they directly impact their effective tuning range.
Keywords
circuit tuning; microswitches; varactors; ANSYS 3D model; electromechanical modeling; high-tuning range RF MEMS varactors; residual compressive stress; stress-induced failure modes; Capacitors; Compressive stress; Dielectrics; Film bulk acoustic resonators; Micromechanical devices; Microswitches; Packaging; Radiofrequency microelectromechanical systems; Switches; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location
Paris
Print_ISBN
88-902012-0-7
Type
conf
Filename
1637269
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