• DocumentCode
    2025406
  • Title

    Stress-induced failure modes in high-tuning range RF MEMS varactors

  • Author

    Chokshi, Trushal ; Peroulis, Dimitrios

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2005
  • fDate
    3-4 Oct. 2005
  • Firstpage
    517
  • Lastpage
    520
  • Abstract
    In this paper we focus on electromechanical modeling of high-tuning range MEMS varactors with a focus on failures caused by residual compressive stress. In particular, we quantitatively evaluate for the first time a high-tuning range parallel-plate MEMS varactor in the presence of residual compressive stress. A 3D model generated in ANSYS agrees very favorably with the measured data and explains non-ideal discontinuities in the varactor´s C-V curve. It is interesting to note that, although the failures considered in this paper are not encountered in RF MEMS switches, they become particularly important in analog MEMS varactors since they directly impact their effective tuning range.
  • Keywords
    circuit tuning; microswitches; varactors; ANSYS 3D model; electromechanical modeling; high-tuning range RF MEMS varactors; residual compressive stress; stress-induced failure modes; Capacitors; Compressive stress; Dielectrics; Film bulk acoustic resonators; Micromechanical devices; Microswitches; Packaging; Radiofrequency microelectromechanical systems; Switches; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
  • Conference_Location
    Paris
  • Print_ISBN
    88-902012-0-7
  • Type

    conf

  • Filename
    1637269