Title :
Can silicon catch the millimeter wave?
Author_Institution :
Lab. of Electron. Res., Delft Univ. of Technol., Netherlands
Abstract :
Transceiver designs implemented in silicon technology are most competitive in design cycle-time and performance versus cost when compared to other technologies. Scaling is driving silicon technology towards gain-bandwidths of 300 GHz, enabling circuits operating deep into mm-wave frequency bands (i.e., well above 30 GHz). However, innovations in on-chip passive design and construction currently being pioneered in mixed-signal silicon technologies may be the real technology enablers at these frequencies. Relevant examples are presented from the author´s own work and the recent literature.
Keywords :
elemental semiconductors; millimetre wave integrated circuits; silicon; transceivers; 300 GHz; mixed-signal silicon technologies; mm-wave frequency bands; onchip passive design; silicon technology; transceiver designs; Attenuation; Bandwidth; Integrated circuit interconnections; Integrated circuit technology; Millimeter wave communication; Millimeter wave technology; Radio frequency; Radiofrequency integrated circuits; Silicon; Transceivers;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7