Title :
A Tunable FET Amplifier in Integrating Waveguide Technology
Author :
Meier, U. ; Hinken, J.H.
Abstract :
A novel low loss guiding structure (INWATE) is applied to the design of GaAs FET waveguide amplifiers. Experimental results of a single stage amplifier show a gain characteristic of 6.7 ± 0.15 dB within a relative bandwidth of 2.4 % at a midband frequency of 10.15 GHz with an associated minimum noise figure of 3.6 dB (MGF 1302 : MAG = 9.8 dB, FMIN = 2.3 dB).
Keywords :
Coaxial components; FETs; Frequency; Hollow waveguides; Impedance; Integrated circuit technology; Noise figure; Optical device fabrication; Rectangular waveguides; Tuning;
Conference_Titel :
Microwave Conference, 1986. 16th European
Conference_Location :
Dublin, Ireland
DOI :
10.1109/EUMA.1986.334280
