Temperature dependences of RF small-signal characteristics for the SOI dynamic threshold voltage MOSFET

Author

Wang, Sheng-Chun ; Su, Pin ; Chen, Kun-Ming ; Huang, Sheng-Yi ; Hung, Cheng-Chou ; Huang, Guo-Wei

fYear

2009

fDate

28-29 Sept. 2009

Firstpage

69

Lastpage

72

Abstract

In this paper, the temperature dependences of RF small-signal characteristics for the SOI dynamic threshold voltage (DT) MOSFET (-25 to 125degC) are examined under different bias points. The temperature effects on the intrinsic small-signal parameters and body-related parasitics are also investigated. Moreover, along with our proposed expressions for the cut-off and maximum oscillation frequencies (f_t and f_max), the impact of these intrinsic parameters and parasitics on the temperature behaviors of the DT MOSFET´s RF performance can be well captured and described.

Keywords

MOSFET; semiconductor device models; silicon-on-insulator; thermal analysis; DT MOSFET temperature dependency behavior; RF small-signal characteristics; SOI dynamic threshold voltage MOSFET; Si-SiO₂; body-related parasitics; intrinsic small-signal parameters; oscillation frequencies; temperature -25 C to 125 C; temperature effects; Cutoff frequency; Fingers; MOSFET circuits; Microwave devices; Microwave integrated circuits; Power MOSFET; Radio frequency; Scattering parameters; Temperature dependence; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European

Conference_Location

Rome

Print_ISBN

978-1-4244-4749-7

Type

conf

Filename

5296462