Title :
Extraction of effective LDMOSFET channel length and its application to the modeling
Author :
Tsuji, Katsuhiro ; Terada, Kazuo ; Minami, Masahiro ; Tanaka, Koji
Author_Institution :
Fac. of Inf. Sci., Hiroshima City Univ., Japan
Abstract :
The effective channel length of LD (lateral double diffused) MOSFET is accurately extracted and is applied to develop its circuit simulation model, which has the physical meaning of the channel length and so on. This model is consisted of a simple MOSFET, gate-voltage dependent resistor and three resistors. It is confirmed that the errors between the measured electrical characteristics and the calculated ones are less than 5 percent.
Keywords :
MOSFET; semiconductor device models; LDMOSFET; circuit simulation model; effective channel length; electrical characteristics; lateral double diffused MOS transistor; parameter extraction; Breakdown voltage; CMOSFETs; Circuit simulation; Data mining; Electrical resistance measurement; Length measurement; MOSFET circuits; National electric code; Resistors;
Conference_Titel :
Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on
Print_ISBN :
0-7803-6275-7
DOI :
10.1109/ICMTS.2000.844409
