Title :
A broad-band active frequency doubler operating up to 120 GHz
Author :
Puyal, V. ; Konczykowska, A. ; Nouet, P. ; Bernard, S. ; Riet, M. ; Jorge, F. ; Godin, J.
Author_Institution :
Alcatel-Thales III-V Lab, Marcoussis, France
Abstract :
A broad-band monolithic integrated active frequency doubler operating in DC-120 GHz frequency range is presented and compared with several previous versions. The circuit is fabricated in a self-aligned InP DHBT process. Circuit measurements show sinusoidal output waveform at 120 GHz. For -8 dBm input power, the doubler has a maximum conversion gain of -0.25 dB at 50 GHz due to a peaking inductor on the doubler output.
Keywords :
III-V semiconductors; MIMIC; frequency multipliers; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; 120 GHz; 50 GHz; DHBT process; InP; broad-band active frequency doubler; monolithic integrated active frequency doubler; DH-HEMTs; Fabrication; Frequency measurement; Gain; III-V semiconductor materials; Indium phosphide; Inductors; Integrated circuit measurements; Particle measurements; Semiconductor materials;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
