A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology

Author

Schwörer, C. ; Roca, Y. Campos ; Leuther, A. ; Tessmann, A. ; Seelmann-Eggebert, M. ; Massler, H. ; Schlechtweg, M. ; Weimann, G.

Author_Institution

Extremadura Univ., Caceres, Spain

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

565

Lastpage

568

Abstract

A coplanar millimeter wave doubler MMIC covering the entire G-band was developed. Based on a 50 nm metamorphic HEMT technology, the circuit demonstrates an output power of more than -12 dBm between 150- and 220 GHz for an input power of 0 dBm. By increasing the input power to 12 dBm an output power exceeding 0 dBm was obtained in the frequency range between 180- and 220 GHz. Good fundamental rejection was ensured by using a Marchand balun for balancing the design. The doubler was also used to provide the LO signal for a 170 to 200 GHz resistive FET mixer, yielding a conversion loss of 10 dB.

Keywords

HEMT integrated circuits; MMIC mixers; baluns; field effect transistors; frequency multipliers; 150 to 220 GHz; 50 nm; FET mixer; G-band; Marchand balun; coplanar millimeter wave doubler MMIC; metamorphic HEMT technology; Acoustic sensors; FETs; MMICs; Millimeter wave technology; Optical sensors; Power generation; Resonant frequency; Sensor phenomena and characterization; Varactors; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637281