DocumentCode
2025710
Title
Thermal channel noise of quarter and sub-quarter micron NMOSFET´s
Author
Knoblinger, Gerhard ; Klein, Peter ; Baumann, Uwe
Author_Institution
Infineon Technol. AG, Germany
fYear
2000
fDate
2000
Firstpage
95
Lastpage
98
Abstract
We present a simple and efficient method for the extraction of thermal channel noise of MOSFET´s in quarter and sub-quarter micron technologies from NF50 (noise figure at 50 ohm source resistance) measurements. For shorter channel lengths the experimental results shows a continuously rising deviation from the classical long channel theory. For a 0.18 μm technology a φ≈6 instead of 2/3 in saturation was extracted (increase of factor 9 compared to the long channel theory).
Keywords
CMOS integrated circuits; MOSFET; equivalent circuits; semiconductor device measurement; semiconductor device models; semiconductor device noise; thermal noise; 0.18 to 0.25 micron; NF50 measurements; n-MOSFET; n-channel MOSFET; noise figure measurements; quarter micron NMOSFET; sub-quarter micron NMOSFET; thermal channel noise; Electrons; FETs; Hot carriers; Kelvin; Lattices; MOS devices; Reduced instruction set computing; SPICE; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on
Print_ISBN
0-7803-6275-7
Type
conf
DOI
10.1109/ICMTS.2000.844412
Filename
844412
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