DocumentCode :
2025926
Title :
Characterisation of systematic MOSFET transconductance mismatch
Author :
Tuinhout, H.
Author_Institution :
Philips Res., Eindhoven, Netherlands
fYear :
2000
fDate :
2000
Firstpage :
131
Lastpage :
136
Abstract :
This paper presents a study on MOSFET transconductance mismatch characterisation using MOSFET pairs with intentional 1% dimensional offsets. Furthermore, a new mismatch phenomenon is introduced that is attributed to mechanical strain associated with CMP dummy tiles.
Keywords :
MOSFET; chemical mechanical polishing; semiconductor device measurement; semiconductor device models; CMP dummy tiles; CS/CG configuration; MOSFET pairs; cumulative probability; current factor mismatch; dimensional offsets; mechanical strain; scribe-lane test structures; statistical estimators; systematic transconductance mismatch; Heart; Large Hadron Collider; MOSFET circuits; Measurement standards; Noise measurement; Noise reduction; Passivation; Testing; Threshold voltage; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on
Print_ISBN :
0-7803-6275-7
Type :
conf
DOI :
10.1109/ICMTS.2000.844419
Filename :
844419
Link To Document :
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