Title :
A GaAs monolithic anti-series varactor pair for voltage-controlled capacitance with reduced RF nonlinearity
Author :
Han, Qing ; Shimura, Atsushi ; Inagaki, Keizo ; Ohira, Takashi ; Akaike, Masami
Author_Institution :
ATR Wave Eng. Lab, Kyoto, Japan
Abstract :
This paper presents a trial fabricated GaAs monolithic anti-series varactor pair. Its second-order and third-order harmonic distortions, which are generated from the nonlinearity of capacitance-voltage characteristics, are investigated experimentally and numerically. Compared to the case of a single varactor, the distortions of measurement and simulation are suppressed by about 25 dB and 45 dB for the second-order harmonic, and 3 dB and 10 dB for the third-order harmonic, respectively.
Keywords :
III-V semiconductors; capacitance; gallium arsenide; harmonic distortion; varactors; GaAs; RF nonlinearity reduction; monolithic antiseries varactor pair; second-order harmonic distortions; third-order harmonic distortions; voltage-controlled capacitance; Capacitance; Capacitance-voltage characteristics; Distortion measurement; Gallium arsenide; Harmonic distortion; P-n junctions; Radio frequency; Semiconductor device measurement; Varactors; Voltage;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
