Scale length determination of Gate all around (Octagonal cross section) Junctionless Transistor

Author

Sarma, Kaushik Chandra Deva ; Sharma, Santanu

Author_Institution

Dept. of Electron. & Commun., CIT, Kokrajhar, Kokrajhar, India

fYear

2015

fDate

29-30 Jan. 2015

Firstpage

1

Lastpage

5

Abstract

A method for scale length determination of Gate all around (Octagonal cross section) Junctionless Transistor is reported in this paper. The scale length expression is obtained by solving the 3D Poisson´s equation. Variation of scale length with gate oxide thickness, side length of octagon and dielectric constant is shown. The Transverse and central electrostatic potential profile is also shown for different values of gate oxide thickness, side length of octagon, Channel length and Drain voltage and Gate Voltage are shown. Longitudinal electric field profile for different value of drain voltage is also shown. The scale length value decreases linearly with decreasing gate oxide thickness and side length of octagon and decreases nonlinearly with increasing dielectric constant.

Keywords

MOSFET; Poisson equation; permittivity; 3D Poisson´s equation; central electrostatic potential profile; channel length; dielectric constant; drain voltage; gate all around junctionless transistor; gate oxide thickness; gate voltage; longitudinal electric field profile; octagon side length; octagonal cross section junctionless transistor; scale length determination; scale length value; transverse potential profile; Dielectric constant; Electric fields; Electric potential; Electrostatics; Equations; Logic gates; Transistors; Full depletion; Junctionless transistor; Octagon; Poisson´s equation; Scale length;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Design, Computer Networks & Automated Verification (EDCAV), 2015 International Conference on

Conference_Location

Shillong

Print_ISBN

978-1-4799-6207-5

Type

conf

DOI

10.1109/EDCAV.2015.7060528

Filename

7060528