Title :
Physically-based effective width modeling of MOSFETs and diffused resistors
Author :
McAndrew, Colin C. ; Sekine, S. ; Cassagnes, Alexandra ; Wu, Zhicheng
Author_Institution :
Motorola Inc., Tempe, AZ, USA
Abstract :
This paper presents effective DC electrical width models for MOSFETs and diffused resistors. The models account for the geometric width dependence on the LOCOS effect and the dog-bone (or webbing) effect, for devices defined by field oxide, and on the finite dopant source effect, for lowly doped resistors. The models are physically-based, C∞-continuous functions of geometry, and significantly improve modeling of MOSFETs and resistors over geometry.
Keywords :
MOSFET; doping profiles; isolation technology; resistors; semiconductor device models; C∞-continuous functions; LOCOS effect; MOSFETs; diffused resistors; dog-bone effect; effective DC electrical width models; field oxide; finite dopant source effect; geometric width dependence; physically-based effective width modeling; webbing effect; BiCMOS integrated circuits; Etching; Geometry; MOSFETs; Radio frequency; Resistors; Semiconductor device modeling; Semiconductor process modeling; Solid modeling;
Conference_Titel :
Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on
Print_ISBN :
0-7803-6275-7
DOI :
10.1109/ICMTS.2000.844426
