DocumentCode
2026132
Title
Physically-based effective width modeling of MOSFETs and diffused resistors
Author
McAndrew, Colin C. ; Sekine, S. ; Cassagnes, Alexandra ; Wu, Zhicheng
Author_Institution
Motorola Inc., Tempe, AZ, USA
fYear
2000
fDate
2000
Firstpage
169
Lastpage
174
Abstract
This paper presents effective DC electrical width models for MOSFETs and diffused resistors. The models account for the geometric width dependence on the LOCOS effect and the dog-bone (or webbing) effect, for devices defined by field oxide, and on the finite dopant source effect, for lowly doped resistors. The models are physically-based, C∞-continuous functions of geometry, and significantly improve modeling of MOSFETs and resistors over geometry.
Keywords
MOSFET; doping profiles; isolation technology; resistors; semiconductor device models; C∞-continuous functions; LOCOS effect; MOSFETs; diffused resistors; dog-bone effect; effective DC electrical width models; field oxide; finite dopant source effect; geometric width dependence; physically-based effective width modeling; webbing effect; BiCMOS integrated circuits; Etching; Geometry; MOSFETs; Radio frequency; Resistors; Semiconductor device modeling; Semiconductor process modeling; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on
Print_ISBN
0-7803-6275-7
Type
conf
DOI
10.1109/ICMTS.2000.844426
Filename
844426
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