Title :
New method for parameter extraction in deep submicrometer MOSFETs
Author :
Mourrain, C. ; Cretu, B. ; Ghibaudo, Gerard ; Cottin, P.
Author_Institution :
France Telecom, CNET, Meylan, France
Abstract :
A new method for the MOSFET parameter extraction including second order mobility attenuation is proposed. The advantage of the method is to remain compatible with previously existing ones avoiding second order derivative procedure and therefore to be applicable for in line parametric test extraction in the microelectronics industry.
Keywords :
CMOS integrated circuits; MOSFET; carrier mobility; integrated circuit measurement; semiconductor device measurement; 0.25 micron; CMOS ICs; deep submicron MOSFETs; inline parametric test extraction; parameter extraction; second order mobility attenuation; Capacitance; Circuits; Distributed control; MOSFETs; Microelectronics; Parameter extraction; Silicon; Threshold voltage; Virtual colonoscopy;
Conference_Titel :
Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on
Print_ISBN :
0-7803-6275-7
DOI :
10.1109/ICMTS.2000.844428
