Title :
Influence of envelope impedance termination on RF behaviour of GaN HEMT power devices
Author :
Bunz, B. ; Ahmed, A. ; Kompa, G.
Author_Institution :
Fachgebiet Hochfrequenztechnik, Kassel Univ., Germany
Abstract :
The influence of envelope source and load terminations on the RF performance of high power GaN amplifiers is investigated. An error-corrected two-tone measurement system has been developed enabling load- and source pull measurements in the envelope frequency bandwidth. Measured results on a 0.5 /spl mu/m-HEMT with a gate width of 8/spl times/125 /spl mu/m show a variation of 1 dB output power and 8 % PAE.
Keywords :
III-V semiconductors; gallium compounds; power HEMT; power amplifiers; radiofrequency amplifiers; wide band gap semiconductors; 1 dB; 8 percent; GaN; HEMT power devices; RF behaviour; envelope impedance termination; high power amplifiers; source pull measurements; two-tone measurement system; Bandwidth; Frequency measurement; Gallium nitride; HEMTs; High power amplifiers; Impedance; Power generation; Power measurement; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
