Title :
Characterization of trench isolation for BiCMOS technologies
Author :
Klootwijk, J.H. ; Muda, C. ; Terpstra, D.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
We have developed and characterized new test structures for deep trench isolation in deep submicron BiCMOS technologies. These structures enable accurate characterization of the influence of trench isolation on device performance, without the necessity of fully processed lots. In particular capacitances, breakdown and leakage mechanisms can be investigated. This paper discusses the test structures, measurement methods (in particular separation of capacitance contributions) as well as some technological conclusions that were derived from measurement results that were obtained with the test structures.
Keywords :
BiCMOS integrated circuits; capacitance measurement; integrated circuit measurement; integrated circuit testing; isolation technology; leakage currents; breakdown mechanisms; capacitances; deep submicron BiCMOS technologies; deep trench isolation; leakage mechanisms; measurement methods; test structures; trench isolation characterisation; Bandwidth; BiCMOS integrated circuits; Boron; Etching; Isolation technology; Parasitic capacitance; Power dissipation; Production; Silicon; Testing;
Conference_Titel :
Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on
Print_ISBN :
0-7803-6275-7
DOI :
10.1109/ICMTS.2000.844431
