A miniature dc-to-50 GHz CMOS SPDT distributed switch

Author

Yeh, Mei-Chao ; Tsai, Zuo-Min ; Wang, Huei

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2005

fDate

3-4 Oct. 2005

Firstpage

665

Lastpage

668

Abstract

A dc-to-50-GHz SPDT switch in standard bulk 0.18-/spl mu/m CMOS process is demonstrated in this paper. In order to extend the operation frequency, the traveling-wave circuit topology is utilized. The switch achieves a measured insertion loss of less than 6 dB, a measured isolation of better than 38 dB from dc to 50 GHz. The measured input P/sub 1 dB/ of 17.4 dBm at 5.8 GHz and 19.6 dBm at 40 GHz is attained. The chip size is only 0.5 /spl times/ 0.5 mm/sup 2/. To our knowledge, this work is the first CMOS switch operating from dc to millimeter-wave frequency with a miniature chip size.

Keywords

CMOS integrated circuits; millimetre wave integrated circuits; network topology; semiconductor switches; 0.18 mum; 40 GHz; 5.8 GHz; 50 GHz; CMOS switch; insertion loss; millimeter-wave frequency; miniature SPDT distributed switch; miniature chip; standard bulk CMOS process; traveling-wave circuit topology; CMOS process; CMOS technology; Circuit topology; Communication switching; Insertion loss; Power transmission lines; Radio frequency; Semiconductor device measurement; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European

Conference_Location

Paris

Print_ISBN

88-902012-0-7

Type

conf

Filename

1637307