DocumentCode :
2026352
Title :
PZT thin film pressure sensor for on-line monitoring injection molding
Author :
Luo, Ren C. ; Chen, Chien Ming
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Chen Univ., Ming-Hsiung, Taiwan
Volume :
4
fYear :
2000
fDate :
2000
Firstpage :
2394
Abstract :
In this paper, a new fabrication process for lead zirconate titanate (PbZrTiO3, PZT) micro pressure sensor is presented. The PZT pressure sensor can be applied to on-line monitoring of the pressure in the mold´s core and cavity during the injection process. This PZT piezoelectric thin film sensor is deposited on the surface of steel wafer at 300°C by RF sputtering process and is micro fabricated directly. The composition of the steel wafer is similar to the injection mold used in most injection machines. After the sputter deposition, rapid or slow thermal annealing treatment is proceeded at 650°C. Rapid thermal annealing will attain better ferroelectric property and better perovskite crystal structure of PZT thin films. However, rapid thermal annealing can cause film cracks. This research developed multilayer PZT thin film techniques, which can reduce the effect of film cracks. The properties of the proposed PZT thin film pressure sensor are: the remnant polarization (Pr), coercive field (Ec), and relative dielectric constant (εs ) of the PZT films are 10.41 C/cm2, 79.2 kV/cm and 1535, respectively; the piezoelectric constant d33 and d31 are estimated to be 129.9 pc/N and -48.03 pc/N, respectively
Keywords :
computerised monitoring; crystal structure; lead compounds; moulding; piezoelectric thin films; piezoelectric transducers; pressure sensors; rapid thermal annealing; sputtered coatings; titanium compounds; zirconium compounds; 300 C; 650 C; PZT thin film pressure sensor; PbZrTiO3; RF sputtering process; coercive field; fabrication process; ferroelectric property; film cracks; injection molding; lead zirconate titanate; micro pressure sensor; mold cavity; mold core; multi-layer PZT thin film techniques; on-line monitoring; perovskite crystal structure; rapid thermal annealing; relative dielectric constant; remnant polarization; slow thermal annealing; steel wafer; Dielectric thin films; Fabrication; Ferroelectric films; Monitoring; Piezoelectric films; Rapid thermal annealing; Rapid thermal processing; Sputtering; Steel; Thin film sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics Society, 2000. IECON 2000. 26th Annual Confjerence of the IEEE
Conference_Location :
Nagoya
Print_ISBN :
0-7803-6456-2
Type :
conf
DOI :
10.1109/IECON.2000.972372
Filename :
972372
Link To Document :
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