DocumentCode :
2026370
Title :
Efficiency improvement in Doherty power amplifier by using Class F approach
Author :
Colantonio, Paolo ; Giannini, Franco ; Giofrè, Rocco ; Piazzon, Luca
Author_Institution :
Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome, Italy
fYear :
2009
fDate :
28-29 Sept. 2009
Firstpage :
17
Lastpage :
20
Abstract :
In this contribution, the design of an uneven AB-C Doherty power amplifier (DPA) in GaN technology, implementing a Class F configuration for the Main device, is presented. Theoretical support will be given to understand why and how some relevant DPA´s design parameters have to be carefully selected when a Class F strategy is adopted. Moreover, a comparison between the output performance obtained from a simple tuned load DPA and the here presented Class F DPA will be given. From the experimental results, the realised Class F DPA achieved, in an output back-off of 6 dB, an average drain efficiency of 50% with a saturated output power of 3.2 W at 2.14 GHz.
Keywords :
III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; AB-C Doherty power amplifier; Class F approach; GaN; drain efficiency; output back-off; saturated output power; tuned load DPA; Design engineering; Gallium nitride; Microwave amplifiers; Microwave integrated circuits; Microwave technology; Peak to average power ratio; Power amplifiers; Power engineering and energy; Power generation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference, 2009. EuMIC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4749-7
Type :
conf
Filename :
5296496
Link To Document :
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