Title :
A C-band high efficiency second harmonic tuned hybrid power amplifier in GaN technology
Author :
Colantonio, P. ; Giannini, F. ; Giofrè, R. ; Limiti, E. ; Serino, A. ; Peroni, M. ; Romanini, P. ; Proietti, C.
Author_Institution :
Dept. of Electron. Eng., Rome Univ., Italy
Abstract :
In this contribution a C-band 2nd harmonic tuned hybrid power amplifier utilizing a PHEMT GaN device is presented, together with technological aspects, non linear device model and adopted design criteria. The amplifier has been realised in hybrid form, exhibiting a bandwidth larger than 20% around 5.5 GHz, with a minimum output power of 33 dBm, and a drain efficiency of 60% at the centre frequency.
Keywords :
III-V semiconductors; circuit tuning; gallium compounds; high electron mobility transistors; microwave amplifiers; power harmonic filters; wide band gap semiconductors; 5.5 GHz; C-band second harmonic tuned hybrid power amplifier; GaN; PHEMT device; nonlinear device model; Breakdown voltage; Gallium nitride; Gold; HEMTs; High power amplifiers; Power amplifiers; Power generation; Power system harmonics; Silicon carbide; Silicon compounds;
Conference_Titel :
Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. European
Conference_Location :
Paris
Print_ISBN :
88-902012-0-7
