DocumentCode :
2026389
Title :
Fowler Nordheim induced light emission from MOS diodes
Author :
Bellutti, P. ; Betta, G. F Dalla ; Zorzi, N. ; Versari, R. ; Pieracci, Augusto ; Riccò, B. ; Manfredi, M. ; Soncini, G.
Author_Institution :
Div. Microsistemi, ITC-IRST, Italy
fYear :
2000
fDate :
2000
Firstpage :
223
Lastpage :
226
Abstract :
Light emission from MOS tunnel diodes biased in the Fowler-Nordheim regime has been investigated by using especially designed test structures which avoid the obscuring effect of the poly-Si layer, thus allowing an efficient light emission from the Si substrate. The measured photon energy distribution of the emitted light is consistent with a hot carrier radiation model.
Keywords :
MIS devices; light emitting diodes; luminescence; semiconductor device measurement; tunnel diodes; Fowler Nordheim induced light emission; MOS tunnel diodes; MOSLED; Si; Si substrate; SiO2-Si; hot carrier radiation model; photon energy distribution; poly-Si layer; polysilicon layer; test structures; Anodes; Artificial intelligence; Cathodes; Computer aided instruction; Diodes; Electrons; Photonic integrated circuits; Strips; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 2000. ICMTS 2000. Proceedings of the 2000 International Conference on
Print_ISBN :
0-7803-6275-7
Type :
conf
DOI :
10.1109/ICMTS.2000.844435
Filename :
844435
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2026389
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