A new extraction method of high frequency noise parameters in the temperature range -55/150 deg. for SiGe HBT in BiCMOS process

High Frequency (HF) test structures for SiGe HBT and a parameter extraction methodology are described to obtain HF merit figures (Ft, Fmax, minimum noise figure NFmin, optimum source reflection coefficient GammaOPT, and noise equivalent resistance RN) in the temperature range -55/150 deg. The frequency range is 45 MHz-110 GHz for S parameters and 800 MHz-4 GHz for noise ones. Thanks to low substrate losses in these structures, a new fast de-embedding method for HF noise measurement is presented. Experimental data show an increase of base resistance, NFmin, GammaOPT, Rn and a decrease of Ft, Fmax with increasing temperatures because of the electron mobility evolution.