Title :
Integrated passive devices on the selectively anodized aluminum oxide
Author :
Yook, Jong-Min ; Yu, Je-In ; Kim, Young-Joon ; Kwon, Young-Se
Author_Institution :
Depart. EECS, Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
fDate :
Sept. 29 2009-Oct. 1 2009
Abstract :
By using selectively anodized aluminium, various IPDs (integrated passive devices) are designed and fabricated. Thin-film processes are used to realize high Q inductors and high density capacitors. Q factors of the fabricated spiral inductors have more than 25 at 2 GHz and IPDs fabricated using this inductors have good RF performances. The fabricated 0.9 GHz LPF and 2.45 GHz BPF have only 0.38 dB and 1.89 dB of IL (insertion loss) respectively with small size.
Keywords :
Q-factor; aluminium; radiofrequency integrated circuits; thin film inductors; Q factors; frequency 0.9 GHz; frequency 2 GHz; frequency 2.45 GHz; high Q inductors; high density capacitors; integrated passive devices; loss 0.38 dB; loss 1.89 dB; selectively anodized aluminum oxide; spiral inductors; thin-film process; Aluminum oxide; Band pass filters; Capacitors; Costs; Electronics packaging; Fabrication; Radio frequency; Spirals; Substrates; Thin film inductors; Anodized aluminum; BPF; Diplexer; IPD; Integrated passive devices; LPF; MCM package; SIP;
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0
