Title :
A 3.5 GHz 2nd harmonic tuned PA design
Author :
El Maazouzi, L. ; Colantonio, P. ; Mediavilla, A. ; Giannini, F.
Author_Institution :
Dept. of Commun. Eng., Univ. of Cantabria, Santander, Spain
fDate :
Sept. 29 2009-Oct. 1 2009
Abstract :
The efficiency of microwave PAs is limited by the active device parameters and operating conditions. High efficiency can be obtained by a proper selection of bias point and harmonic terminations or, from a different point of view, by a proper output voltage and/or current waveform shaping. This work describes the design of a high efficient 3.5 GHz GaN HEMT power amplifier which may be used in WiMAX applications. The PA is designed by using a 2nd harmonic tuned (HT) approach and has been realized and measured. Its measured performances confirm the improvement obtained by means of harmonic manipulation over class AB (TL PA). An output power of 35.3 dBm has been measured for the maximum power added efficiency of 57.7%, drains efficiency of 69.18% and measured C/I3 of 19.1 dB.
Keywords :
gallium compounds; harmonic generation; high electron mobility transistors; microwave power amplifiers; wide band gap semiconductors; 2nd harmonic tuning; GaN; HEMT power amplifier; drains efficiency; efficiency 57.7 percent; efficiency 69.18 percent; frequency 3.5 GHz; microwave PA; power added efficiency; Gallium nitride; HEMTs; High power amplifiers; Microwave devices; Performance evaluation; Power amplifiers; Power generation; Power measurement; Voltage; WiMAX;
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0
