Dynamic behavior of Ti/4H-SiC Schottky diodes

The wide band gap (3.2 eV) allows the silicon carbide (SiC) to work at high temperatures with high voltages and currents, to switch large power densities and reduce losses. The 4H-SiC polytype is the most widely used material for electronic applications. Despite the development of manufacturing technology of SiC wafers, this material has structural defects, such as micropipes, dislocations and inclusions of polytypes. In this paper, the defects and dynamic performance of the SiC Schottky diodes is studied and the obtained maximum reverse voltage is 600V. The reverse recovery time is evaluated to 135ns. The results demonstrate the effectiveness of the SiC devices in reducing the overall system losses generated by switching transitions compared to silicon based diodes. We introduced the parameters found in the Ti/4H-SiC Schottky diode in the Pspice model for simulation. We compared these results with the model using Matlab-Simulink to see the behavior of the switching cell and to deduce the equivalent circuit of diode in dynamic transitions.