DocumentCode :
2027834
Title :
A 3-input Universal Logic Gate (ULG) using a Single Electron Linear Threshold Gate (LTG)
Author :
Rehan, Sameh Ebrahim
Author_Institution :
Commun. & Electron. Eng. Dept., Mansoura Univ. (MU), Mansoura, Egypt
fYear :
2012
fDate :
25-28 March 2012
Firstpage :
630
Lastpage :
633
Abstract :
The Single Electron NanoDevices (SENDs) are attractive candidates for post-CMOS VLSI era mainly due to its very low power consumption. In this paper, the Single Electron (SE) Linear Threshold Gate (LTG) is reviewed. A 3-input Universal Logic Gate (ULG) is proposed. The universality of this gate is demonstrated by showing how to achieve all possible 8 combinations of output logic functions. This is presented by using two versions of the ULG3; i.e., NEG-ULG3 and POS-ULG3. The detailed parameters for all used devices as well as the corresponding SIMON 2.0 simulation results are included.
Keywords :
logic gates; single electron devices; SIMON 2.0 simulation; output logic function; single electron linear threshold gate; single electron nanodevices; universal logic gate; Capacitance; Capacitors; Logic functions; Logic gates; Simulation; Single electron transistors; Tunneling; Linear Threshold Gate (LTG); MINority logic gate (MIN); Majority Logic Gate (MLG); SIMON 2.0; Single Electron (SE); Single Electron Box (SEB); Single Electron NanoDevices (SENDs); Single Electron Transistor (SET); Universal Logic Gate (ULG);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrotechnical Conference (MELECON), 2012 16th IEEE Mediterranean
Conference_Location :
Yasmine Hammamet
ISSN :
2158-8473
Print_ISBN :
978-1-4673-0782-6
Type :
conf
DOI :
10.1109/MELCON.2012.6196510
Filename :
6196510
Link To Document :
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