Design of Gaas E-phemt low noise amplifier for WLAN application

Author

Misran, M.H. ; Said, M. A Meor ; Cheng, K.G. ; Othman, M.A. ; Ismail, M.M. ; Sulaiman, H.A.

Author_Institution

Centre for Telecommun. Res. & Innovation (CeTRi), Univ. Teknikal Malaysia Melaka, Durian Tunggal, Malaysia

fYear

2012

fDate

7-8 July 2012

Firstpage

106

Lastpage

109

Abstract

This paper describes the design of low noise amplifier using enhancement mode technology for WLAN front-end applications. Typical LNA designed for the IEEE802.1a standard is required to operate with low noise, high gain and exhibit low noise figure. The design uses feedback, and balanced topology to enhance the performance and to achieve the design goal. The LNA is designed operate at 2.4 GHz, noise figure (NF)<; 2dB, gain>;10 dB and with S11 and S22 <;-10 dB. With the voltage supply at 5 V, the total current consumptions for the LNA is 60 Ma.

Keywords

III-V semiconductors; circuit feedback; gallium arsenide; high electron mobility transistors; low noise amplifiers; network topology; wireless LAN; E-pHEMT; GaAs; IEEE802.11a standard; LNA; WLAN front-end application; balanced topology; current 60 mA; enhancement mode technology; feedback; frequency 2.4 GHz; low noise amplifier design; voltage 5 V; Couplers; FETs; Impedance; Mathematical model; Noise; Noise figure; Power transmission lines; E-PHEMT; LNA; WLAN; balanced LNA; feedback LNA;

fLanguage

English

Publisher

ieee

Conference_Titel

Green and Ubiquitous Technology (GUT), 2012 International Conference on

Conference_Location

Jakarta

Print_ISBN

978-1-4577-2172-4

Type

conf

DOI

10.1109/GUT.2012.6344159

Filename

6344159