Title :
A microcontroller SRAM-PUF
Author :
Böhm, Christoph ; Hofer, Maximilian ; Pribyl, Wolfgang
Author_Institution :
Inst. for Electron., Graz Univ. of Technol., Graz, Austria
Abstract :
Key storage is a well-known security issue. Usually, keys are generated and then stored in an non-volatile memory (NVM). A promising alternative are the so-called physical unclonable functions (PUFs). These functions extract key material directly from manufacturing variabilities of a device. One example of such a PUF is the SRAM-PUF. It uses the power-up states of SRAM cells to generate an ID/key. In this paper we present an SRAM PUF which we implemented on a microcontroller using the internal SRAM blocks. Combined with a simple error correction code, namely the repetition code, we could reduce the error rates to small values. Using a repetition factor of 31 we reached a probability for one or more errors within a 2048bit key of lower than 7e-7 within a temperature range from 0C to 80C. The low costs and the simplicity of implementation makes the SRAM-PUF on a microcontroller an attractive alternative to common approaches.
Keywords :
SRAM chips; error correction codes; microcontrollers; security of data; SRAM cell power-up state; SRAM-PUF microcontroller; error correction code; internal SRAM block; key storage; physical unclonable function; repetition code; repetition factor; static random access memory; temperature 0 degC to 80 degC; Ash; Correlation; Error analysis; Error correction codes; Microcontrollers; Random access memory; Semiconductor device measurement;
Conference_Titel :
Network and System Security (NSS), 2011 5th International Conference on
Conference_Location :
Milan
Print_ISBN :
978-1-4577-0458-1
DOI :
10.1109/ICNSS.2011.6060013