Title :
A low-power ka-band direct conversion receiver employing half-frequency local oscillator in 65nm CMOS
Author :
Sosio, M. ; Mazzanti, A. ; Repossi, M. ; Svelto, F.
Author_Institution :
Dipt. di Elettron., Univ. di Pavia, Pavia, Italy
fDate :
Sept. 29 2009-Oct. 1 2009
Abstract :
Direct conversion to DC by means of quadrature SubHarmonic mixers is a promising solution to arrive at low power silicon receivers working at millimeter waves. A lower frequency local oscillator (LO) does not compromise receiver performances while takes advantage of the higher quality of tuning elements and avoids high frequency, power-hungry dividers in the synthesizer. This paper summarizes our recent research efforts to arrive at a low power receiver architecture tailored to Ka band operation. The receiver IC, implemented in a 65 nm CMOS technology, displays 31.5 dB gain and 6.7 dB NF. The LO has an outstanding frequency tuning range of 26.5% with -110 dBc/Hz phase noise at 1 MHz offset. Total power dissipation is 78 mW only.
Keywords :
CMOS integrated circuits; millimetre wave mixers; millimetre wave receivers; oscillators; CMOS technology; Ka band direct conversion receiver; complementary metal-oxide-semiconductor; frequency tuning; gain 31.5 dB; half-frequency local oscillator; noise figure 6.7 dB; power 78 mW; power dissipation; power silicon receivers; quadrature subharmonic mixers; size 65 nm; CMOS integrated circuits; CMOS technology; Frequency conversion; Frequency synthesizers; Integrated circuit noise; Local oscillators; Millimeter wave technology; Mixers; Silicon; Tuning;
Conference_Titel :
Microwave Conference, 2009. EuMC 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4748-0