Title :
Subnanosecond high current switching with low-ohmic load by application of drift step-recovery diodes
Author :
Vainshtein, S. ; Kostamovaara, J. ; Maatta, K. ; Kilpela, A.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
Fast recovery of the voltage across semiconductor diodes has allowed us to obtain 100 A current pulses across a low-ohmic load with a rise time in the subnanosecond range. Further dI/dt increase is predicted, provided that the diode structure is further optimized
Keywords :
charge storage diodes; power semiconductor diodes; power semiconductor switches; pulse generators; switching; 100 A; drift SRD; drift step-recovery diodes; high current switching; low-ohmic load; subnanosecond switching; Avalanche breakdown; Circuits; Inductance; Laser excitation; Laser modes; Optical pulse generation; Parasitic capacitance; Semiconductor diodes; Ultraviolet sources; Voltage;
Conference_Titel :
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location :
Ames, IA
Print_ISBN :
0-7803-3636-4
DOI :
10.1109/MWSCAS.1996.594119
