DocumentCode
2028701
Title
Subnanosecond high current switching with low-ohmic load by application of drift step-recovery diodes
Author
Vainshtein, S. ; Kostamovaara, J. ; Maatta, K. ; Kilpela, A.
Author_Institution
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Volume
1
fYear
1996
fDate
18-21 Aug 1996
Firstpage
253
Abstract
Fast recovery of the voltage across semiconductor diodes has allowed us to obtain 100 A current pulses across a low-ohmic load with a rise time in the subnanosecond range. Further dI/dt increase is predicted, provided that the diode structure is further optimized
Keywords
charge storage diodes; power semiconductor diodes; power semiconductor switches; pulse generators; switching; 100 A; drift SRD; drift step-recovery diodes; high current switching; low-ohmic load; subnanosecond switching; Avalanche breakdown; Circuits; Inductance; Laser excitation; Laser modes; Optical pulse generation; Parasitic capacitance; Semiconductor diodes; Ultraviolet sources; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location
Ames, IA
Print_ISBN
0-7803-3636-4
Type
conf
DOI
10.1109/MWSCAS.1996.594119
Filename
594119
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