Small signal access paths silicon-BJT de-embedding

High frequency small-signal measurements provide information for time-domain device characterisation. Parasitic phenomena associated with probe and interconnect-metal lines surrounding the device, have an impact on measurements during wafer test. The aim of this work was to subtract the small-signal high-frequency access path effects, using an equivalent model in the 45 MHz-10 GHz range. We propose to apply to bipolar silicon technology a de-embedding GaAs-MESFET method for which the effect of access path are considerably lowered and therefore can be neglected. This correction can then be taken into account for each frequency value during a time domain modelisation