Title :
Modeling and characterization of the IGBT electrothermal transistor for circuit applications
Author :
Amimi, A. ; Bouchakour, R. ; Maurel, T. ; Oliaei, O.
Author_Institution :
Dept. Electron., Ecole Nat. Superieure des Telecommun., Paris, France
Abstract :
An analytical model for the power Insulated Gate Bipolar Transistor (IGBT) including electrothermal interactions is developed. In this model the device´s temperature becomes an interactive variable during the simulation. The model has been implemented in the Saber circuit simulator. Comparisons between simulation and measurement show that the steady-state as well as the transient analysis of the IGBT are accurately reproduced
Keywords :
circuit analysis computing; insulated gate bipolar transistors; power transistors; semiconductor device models; thermal analysis; transient analysis; IGBT electrothermal transistor; Saber circuit simulator; analytical model; characterization; electrothermal interactions; power IGBT; steady-state analysis; transient analysis; Analytical models; Circuit simulation; Electrothermal effects; Epitaxial layers; Insulated gate bipolar transistors; MOSFET circuits; Semiconductor process modeling; Silicon; Temperature dependence; Thermal conductivity;
Conference_Titel :
Circuits and Systems, 1996., IEEE 39th Midwest symposium on
Conference_Location :
Ames, IA
Print_ISBN :
0-7803-3636-4
DOI :
10.1109/MWSCAS.1996.594131
