• DocumentCode
    2029907
  • Title

    Designing and manufacturing of 1–8 GHz band low-noise GaAs Schottky-gate FET´s taking into account the dimensional effect

  • Author

    Torkhov, N.A. ; Bozhkov, V.G. ; Dobush, I.M. ; Babak, L.I.

  • Author_Institution
    Sci.-Res. Inst. of Semicond., Tomsk, Russia
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    66
  • Lastpage
    67
  • Abstract
    It is shown that taking the dimensional effect (fractal properties of epitaxial n-GaAs) into account in designing and manufacturing of the low-noise 1-8 GHz band Schottky-gate FET´s with a larger gate length allows obtaining a higher power gain KU. The obtained results show the effectiveness of the proposed fractal approach in the designing of Schottky-gate FET´s.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; fractals; gallium arsenide; GaAs; dimensional effect; epitaxial n-gallium arsenide; fractal approach; fractal properties; frequency 1 GHz to 8 GHz; gate length; low-noise gallium arsenide Schottky-gate FET design; power gain; Equivalent circuits; Fractals; Gallium arsenide; Logic gates; MESFETs; Manufacturing; Region 8;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6652610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2029907