Title :
Designing and manufacturing of 1–8 GHz band low-noise GaAs Schottky-gate FET´s taking into account the dimensional effect
Author :
Torkhov, N.A. ; Bozhkov, V.G. ; Dobush, I.M. ; Babak, L.I.
Author_Institution :
Sci.-Res. Inst. of Semicond., Tomsk, Russia
Abstract :
It is shown that taking the dimensional effect (fractal properties of epitaxial n-GaAs) into account in designing and manufacturing of the low-noise 1-8 GHz band Schottky-gate FET´s with a larger gate length allows obtaining a higher power gain KU. The obtained results show the effectiveness of the proposed fractal approach in the designing of Schottky-gate FET´s.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; fractals; gallium arsenide; GaAs; dimensional effect; epitaxial n-gallium arsenide; fractal approach; fractal properties; frequency 1 GHz to 8 GHz; gate length; low-noise gallium arsenide Schottky-gate FET design; power gain; Equivalent circuits; Fractals; Gallium arsenide; Logic gates; MESFETs; Manufacturing; Region 8;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
