Title :
Prospects of donor-acceptor geterostructures application in pHEMT´s
Author :
Lukashin, V.M. ; Pashkovskiy, A.B. ; Zhuravlev, K.S. ; Toropov, A.I. ; Lapin, V.G.
Author_Institution :
Fed. State Unitary Corp. R&PC Istok, Fryazino, Russia
Abstract :
The development results of pHEMT´s with an optimized quantum well and additional potential barrier have been submitted. High power transistors with gate length about 0.4 - 0.5 μm and 0.8 mm width have demonstrated specific output power exceeding 1.6 W/mm, associated gain exceeding 9.5 dB and efficiency about 50 % at 10 GHz. Prospects of donor-acceptor doped hetero-structure application in pHEMT´s is done.
Keywords :
impurity states; power HEMT; donor-acceptor doped heterostructures application; high power transistors; pHEMT; quantum well optimization; size 0.8 mm; Electronic mail; Gallium arsenide; Gallium nitride; Microwave amplifiers; Microwave transistors; PHEMTs; Silicon;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
