Title :
X-band GaAs MMIC core chip
Author :
Barov, A.A. ; Kondratenko, A.V.
Author_Institution :
MICRAN Res. & Production Co., Tomsk, Russia
Abstract :
This report presents results of design and manufacturing of X-band GaAs MMIC core chip for T/R modules of modern telecommunication and radiolocation systems. The MMIC are realized in the 0.18um pHEMT (ED02AH) process of OMMIC foundry.
Keywords :
HEMT integrated circuits; III-V semiconductors; field effect MMIC; foundries; gallium arsenide; GaAs; OMMIC foundry; T/R modules; X-band GaAs MMIC core chip; design; manufacturing; modern telecommunication; pHEMT; radiolocation systems; size 0.18 mum; Arrays; Electronic mail; Gallium arsenide; MMICs; Microwave communication; PHEMTs;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
