• DocumentCode
    2029988
  • Title

    Multifunction monolithic GaAs pin-diode core chip for x-band aesa T/R modules

  • Author

    Yushchenko, A.Yu. ; Ayzenshtat, G.I. ; Monastyrev, E.A. ; Bozhkov, V.G. ; Ivashenko, A.I. ; Bezruk, A.V.

  • Author_Institution
    Res. Inst. of Semicond. Devices, Tomsk, Russia
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    72
  • Lastpage
    73
  • Abstract
    The creating possibility of monolithic GaAs pin-diode core chip is shown. The results of development of X-band monolithic GaAs pin-diode core chip including 5 bit attenuator, 6 bit true time delay and SPDT switch are presented.
  • Keywords
    III-V semiconductors; gallium arsenide; microwave diodes; p-i-n diodes; GaAs; SPDT switch; X-band AESA T/R modules; attenuator; multifunction monolithic GaAs pin-diode core chip; time delay; word length 5 bit; word length 6 bit; Attenuators; Delay effects; Electronic mail; Gallium arsenide; MMICs; Microwave antennas; Phase shifters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6652613
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2029988