• DocumentCode
    2030220
  • Title

    GaN HEMT with 0.5-µm gate length and gate width of 500 µm and 1500 µm

  • Author

    Vyuginov, V.N. ; Volkov, V.V. ; Zybin, A.A.

  • Author_Institution
    JSC Svetlana-Electronpribor, St. Petersburg, Russia
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    90
  • Lastpage
    91
  • Abstract
    Design and fabrication process of 0.5-μm GaN HEMT with 500-μm and 1500-μm gate width are described. Results of the S-parameter measurements are presented and compared with the data of TGF2023-01 transistors fabricated by TriQuint Semiconductor.
  • Keywords
    III-V semiconductors; S-parameters; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; HEMT; S-parameter measurements; design; fabrication process; gate length; gate width; size 1500 mum; size 500 mum; Electronic mail; Gallium nitride; HEMTs; Logic gates; Microwave transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6652622
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2030220