Title :
High efficiency L-, S-, C- band GaN power pulse amplifiers
Author :
Sukhanov, D.A. ; Kishchinskiy, A.A.
Author_Institution :
Microwave Syst. JSC, Moscow, Russia
Abstract :
The results of the development and experimental investigation of a L-, S- and C-band GaN transistor amplifiers with output pulse power from 68 to 200 Watt and minimum PAE 40-55% for AESA radar systems are presented. The experimental characteristics, design features and assembly technology of the amplifier are discussed.
Keywords :
III-V semiconductors; UHF power amplifiers; UHF transistors; gallium compounds; microwave power amplifiers; microwave transistors; millimetre wave power amplifiers; millimetre wave transistors; wide band gap semiconductors; AESA radar systems; C-band power pulse amplifiers; GaN; S-band power pulse amplifiers; high efficiency L-band power pulse amplifiers; power 68 W to 200 W; transistor amplifiers; Electronic mail; Gallium nitride; HEMTs; L-band; Microwave amplifiers; Microwave transistors;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
