Title :
Performance with application to folded cascode of a near-ballistic limit carbon nano transistor (CNT) circuits
Author :
Nasser, A.A.A. ; AbdelRassoul, R. ; Aly, Moustafa H. ; Khourshed, A.
Author_Institution :
Arab Acad. for Sci., Arab Acad. for Sci., Technol. & Maritime Transp., Alexandria, Egypt
Abstract :
In this paper, we present a performance evaluation and comparison betweeen a short channel MOSFET and a carbon nanotransistors (CNT) operating near the limit of the ballistic transport. The carbon nanotube can be used in both device fabrication and circuit interconnects as a carbon nanowire (CNW). We provide a performance comparison of a cascode amplifier circuit using quasi-analytical circuit compatible model for the intrinsic ballistic CNFET. Analysis and simulation results show that the CNT is superior from the points of view of the gain and the power dissipation, and the superior transfer characteristics.
Keywords :
MOSFET; ballistic transport; carbon nanotube field effect transistors; semiconductor device models; CNT circuits; CNW; ballistic transport; carbon nanotube; carbon nanowire; cascode amplifier circuit; circuit interconnects; device fabrication; intrinsic ballistic CNFET; near-ballistic limit carbon nanotransistor; power dissipation; quasianalytical circuit compatible model; short channel MOSFET; CNTFETs; Capacitance; Integrated circuit modeling; MOSFET circuits; Nanoscale devices; Scattering; Semiconductor device modeling;
Conference_Titel :
Electrotechnical Conference (MELECON), 2012 16th IEEE Mediterranean
Conference_Location :
Yasmine Hammamet
Print_ISBN :
978-1-4673-0782-6
DOI :
10.1109/MELCON.2012.6196617
