• DocumentCode
    2030326
  • Title

    The methods of compensating parasitic elements of the transistor in class-F amplifier at the microwave range

  • Author

    Yefymovych, A.P. ; Krizhanovski, V.G.

  • Author_Institution
    Donetsk Nat. Univ., Donetsk, Ukraine
  • fYear
    2013
  • fDate
    8-14 Sept. 2013
  • Firstpage
    98
  • Lastpage
    99
  • Abstract
    The methods of construction and calculation of the Output Load Circuit (OLC) which allows compensating the negative effect of parasitic elements of the transistor (output drain-source capacitance - CDS and drain inductance - LD) in class-F power amplifier (PA) with addition of the third harmonic voltage at the frequency of 400 MHz is proposed. The results of modeling and experimental research of energy characteristics of the class-F PA, in which the OLC allowing compensation of CDS and LD has been used, are presented.
  • Keywords
    microwave power amplifiers; OLC calculation; class-F amplifier; class-F power amplifier; frequency 400 MHz; microwave range; output drain-source capacitance; output load circuit; transistor parasitic elements; transistor parasitic elements compensation; Electronic mail; Harmonic analysis; Microwave amplifiers; Microwave transistors; Power amplifiers; Power generation; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-395-1
  • Type

    conf

  • Filename
    6652626
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2030326