Title :
The methods of compensating parasitic elements of the transistor in class-F amplifier at the microwave range
Author :
Yefymovych, A.P. ; Krizhanovski, V.G.
Author_Institution :
Donetsk Nat. Univ., Donetsk, Ukraine
Abstract :
The methods of construction and calculation of the Output Load Circuit (OLC) which allows compensating the negative effect of parasitic elements of the transistor (output drain-source capacitance - CDS and drain inductance - LD) in class-F power amplifier (PA) with addition of the third harmonic voltage at the frequency of 400 MHz is proposed. The results of modeling and experimental research of energy characteristics of the class-F PA, in which the OLC allowing compensation of CDS and LD has been used, are presented.
Keywords :
microwave power amplifiers; OLC calculation; class-F amplifier; class-F power amplifier; frequency 400 MHz; microwave range; output drain-source capacitance; output load circuit; transistor parasitic elements; transistor parasitic elements compensation; Electronic mail; Harmonic analysis; Microwave amplifiers; Microwave transistors; Power amplifiers; Power generation; Transistors;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
