Title :
One-port resonant transistor amplifier
Author :
Shirokov, I.B. ; Lyalyuk, Dmitry V.
Author_Institution :
Dept. of Radio Eng. & Telecommun., Sevastopol Nat. Tech. Univ., Sevastopol, Ukraine
Abstract :
The design, simulation, and operation of one-port resonant transistor amplifiers are considered. The amplifier consists of a single FET and a resonant circuit. From the schematic point of view the considered amplifier is absolutely equivalent to the Hartley oscillator. The operation of the amplifier is based on the use of positive feedback. This is the class of regenerative amplifiers. The amplifier possesses excellent electrical characteristics and has the simplest design. The discussed amplifier will be especially useful at design of active transponders of RFID systems.
Keywords :
field effect transistors; radiofrequency amplifiers; radiofrequency identification; transponders; FET; Hartley oscillator; RFID system; active transponder; electrical characteristics; one-port resonant transistor amplifier; regenerative amplifier; resonant circuit; Educational institutions; Electronic mail; Microwave amplifiers; Radiofrequency identification; Telecommunications; Transistors;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2013 23rd International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-395-1
