Title :
Next generation narrowband RF front-ends in silicon IC technology
Author_Institution :
Toronto Univ., Ont., Canada
Abstract :
It is anticipated that the next generation of wireless systems will deliver voice and data services at carrier frequencies extending up to 6 GHz. The front-end circuits for these radios must be aggressively designed in order to deal with issues such as analog and digital compatibility, higher linearity imposed by broadband signal processing at IF, low supply voltage to minimize size, weight and power consumption, as well as operation in multiple frequency bands. The challenges and opportunities facing the designer of these radio frequency (RF) front-end IC´s in silicon will be addressed in this paper from both the technological and circuit perspectives
Keywords :
analogue integrated circuits; data communication; elemental semiconductors; mobile communication; silicon; transceivers; voice communication; 1 to 6 GHz; IC technology; Si; analog compatibility; broadband signal processing; carrier frequencies; data services; digital compatibility; linearity; multiple frequency bands; next generation narrowband RF front-ends; power consumption; supply voltage; transceivers; voice services; wireless systems; Digital signal processing; Energy consumption; Integrated circuit technology; Linearity; Low voltage; Narrowband; Radio frequency; Radiofrequency integrated circuits; Signal design; Silicon; Switches; Telephony;
Conference_Titel :
VLSI, 1998. Proceedings of the 8th Great Lakes Symposium on
Conference_Location :
Lafayette, LA
Print_ISBN :
0-8186-8409-7
DOI :
10.1109/GLSV.1998.665264
