Title :
Laterally resolved doping by focused ion beam implantation
Author :
Reuter, D. ; Meier, C. ; Alvarez, A. Serrano ; Koch, J. ; Wieck, A.D.
Author_Institution :
Fac. of Phys. & Astron., Ruhr-Univ., Bochum, Germany
Abstract :
Maskless focussed ion beam implantation is proposed as an attractive option for the fabrication of electronic devices in the sub 100 nm range. As a step towards this goal we have demonstrated laterally resolved p- and n-type doping in GaAs by implantation of Be+ and Si+, respectively. By Si+-implantation into an AlxGa1-xAs/GaAs-heterostructure it was possible to create a laterally structured two dimensional electron gas
Keywords :
beryllium; focused ion beam technology; gallium arsenide; ion implantation; nanotechnology; semiconductor doping; silicon; two-dimensional electron gas; AlGaAs-GaAs; Be+ implantation; GaAs; GaAs:Be; GaAs:Si; Si+ implantation; electrically active impurities; fabrication; laterally resolved n-type doping; laterally resolved p-type doping; laterally structured TDEG; maskless FIB implantation; maskless focused ion beam implantation; semiconductors; two dimensional electron gas; Annealing; Conducting materials; Degradation; Gallium arsenide; Ion beams; Molecular beam epitaxial growth; Physics; Semiconductor device doping; Semiconductor materials; Writing;
Conference_Titel :
Industrial Electronics Society, 2000. IECON 2000. 26th Annual Confjerence of the IEEE
Conference_Location :
Nagoya
Print_ISBN :
0-7803-6456-2
DOI :
10.1109/IECON.2000.972562
