Title :
Poly-Silicon gate pre-doping implantation impact on MOSFET matching performances
Author :
Joly, Y. ; Delalleau, J. ; Lopez, L. ; Portal, J.-M. ; Aziza, H. ; Bert, Y. ; Julien, F. ; Fornara, P.
Author_Institution :
STMicroelectronics, Rousset, France
Abstract :
This paper demonstrates how poly-Silicon gate pre-doping implantation impacts MOS matching performances. Measurements are performed on test structures (MOS pairs / capacitors) and analog circuits, using five different processes with pre-doping implantation energy variation (from 35 to 10 KeV) and tilt variation (7° and 25°). TCAD simulations validate a channel counter-doping due to high pre-doping implantation energy causing mismatch degradation.
Keywords :
MOS capacitors; MOSFET; analogue circuits; semiconductor doping; technology CAD (electronics); MOS pairs/capacitors; MOSFET matching; TCAD simulations; analog circuits; channel counter-doping; poly-silicon gate pre-doping implantation impact; test structures; Analog circuits; Doping; Fluctuations; Logic gates; MOSFETs; Semiconductor process modeling; Voltage measurement; TCAD simulation; analog circuit; matching; pre-doping implantation energy;
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2011 6th International Conference on
Conference_Location :
Athens
Print_ISBN :
978-1-61284-899-0
DOI :
10.1109/DTIS.2011.5941437
