DocumentCode
2031075
Title
Characterization of strain fields in graphene films
Author
Dewanto, Raden ; Dale, Carl ; Hu, Zhongxu ; Keegan, Neil ; Gallacher, Barry ; Hedley, John
Author_Institution
Newcastle Univ., Newcastle upon Tyne, UK
fYear
2012
fDate
5-8 March 2012
Firstpage
15
Lastpage
18
Abstract
This paper reports on the Raman shifts corresponding to strain induced in graphene films. A direct correlation is demonstrated between the shifts in the D, G and 2D peaks of graphene compared to the characteristic 521cm-1 peak of the underlying silicon substrate. The approach is shown to be suitable for characterizing the graphene Raman spectrum under load conditions.
Keywords
Raman spectra; deformation; graphene; thin films; C; Raman shifts; Raman spectrum; graphene films; strain fields; Carbon nanotubes; Copper; Epitaxial growth; Imaging; Laboratories; Performance evaluation; Silicon; Raman spectroscopy; strained graphene;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems (NEMS), 2012 7th IEEE International Conference on
Conference_Location
Kyoto
Print_ISBN
978-1-4673-1122-9
Type
conf
DOI
10.1109/NEMS.2012.6196712
Filename
6196712
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