DocumentCode :
2031115
Title :
SiGe hetero FETs on silicon at cryogenic temperature
Author :
Aniel, F. ; Enciso-Aguilar, M. ; Zerounian, N. ; Giguerre, L. ; Crozat, P. ; Adde, R. ; Zeuner, M. ; Hock, G. ; Hackbarth, T. ; Herzog, H.-J. ; Konig, U.
Author_Institution :
Institut d´´Electronique Fondamentale, Universite Paris-Sud
fYear :
2002
fDate :
2002
Firstpage :
3
Lastpage :
10
Keywords :
Cryogenics; FETs; Gallium arsenide; Germanium silicon alloys; III-V semiconductor materials; Indium gallium arsenide; Photonic band gap; Silicon germanium; Stress; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on
ISSN :
1155-4339
Print_ISBN :
2-86883-606-2
Type :
conf
DOI :
10.1109/WOLTE.2002.1022440
Filename :
1022440
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2031115
